Process of Czochralski
The proceeded of Czochralski (pron. “tchokralski”) is a process of growth of single-crystal crystals of great dimension (several centimetres). These “giant” monocrystals are used in the electronics industry (crystals Semi-conducteur S of Silicium doped), for the metallurgical studies and applications of point. One can also make grow artificial Gemme S.
The method consists of a Solidification directed starting from a single-crystal germ of small size. One leaves material just melted at a temperature above the Point melting, with a Gradient of temperature controlled. The germ is placed in a “shuttle” suspended on the top of the liquid by a stem. The liquid is solidified on the germ by keeping the same crystalline organization (epitaxy) as one draws the germ to the top all while making it turn (at very slow speed).
The operation occurs under neutral atmosphere (Argon or Azote) to avoid the Oxydation.
The monocrystal can then be purified by the method of Zone melting.
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